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MRAM click features MRAM module which contains 262,144 magnetoresistive memory cells, organized into 32,768 bytes of memory. It means that MRAM click is a memory storage device with 32KB of memory space. The used memory module can withstand an unlimited number of write cycles, it has data retention period greater than 20 years and it can read and write to random addresses with no delay.
Besides these features that already mark this kind of memory modules a milestone in memory manufacturing technology, the device features data protection in case of power loss, block write protection, low power consumption and fast SPI interface that can theoretically work up to 40MHz. Because of its universal memory characteristics, MRAM click can be used both as a non-volatile storage media, or temporary RAM expansion for storing variables in any embedded application.
FRAM click is a Click board™ that carries a ferroelectric RAM module. Ferroelectric RAM, also known as FRAM, is a non-volatile memory type, with characteristics comparable to much faster DRAM memory modules. It offers much faster alternative to common serial FLASH and EEPROM modules, which use the conventional technologies. FRAM click uses the MB85RS256A, a 256 Kbit serial FRAM module from Fujitsu Semiconductor LTD. Although the FRAM is still being developed, this company managed to provide a very reliable and fast FRAM module that can write data at bus speed, has an extremely high endurance of 1010 read/write cycles, data retention period of 10 years, and very fast SPI interface.