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MIKROE is proud to partner with Fujitsu, a leading technology innovator known for its high-performance memory solutions, including FRAM and ReRAM. By incorporating Fujitsu's memory technologies into our Click boards™, we help developers overcome storage limitations and accelerate embedded system prototyping with reliable, fast, and non-volatile memory.
MIKROE Click Boards™ Featuring Fujitsu Technology
Our collection of Fujitsu-powered Click boards™ includes two specialized categories, each fully compatible with mikroBUS™ and backed by MIKROE's development ecosystem including NECTO Studio, mikroSDK, and example code:
Why Choose MIKROE + Fujitsu?
Explore all MIKROE Click boards™ powered by Fujitsu to empower your embedded solutions with robust, non-volatile storage.
The FRAM 3 Click is a Click board™ that carries a ferroelectric RAM module. Ferroelectric RAM, also known as FRAM, is a non-volatile memory type, with characteristics that are comparable to much faster DRAM memory modules. It offers much faster alternative to common serial FLASH and EEPROM modules, which use the conventional technologies. FRAM 3 click...
FRAM Click is a compact add-on board representing a highly reliable ferroelectric random access memory solution. This board features the MB85RS256A, a memory FRAM from Fujitsu. The MB85RS256A is a 256 Kbit serial FRAM module and comes in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies...
ReRAM 2 Click is a compact add-on board containing highly reliable resistive random-access memory. This board features the MB85AS8MT, an 8Mbit memory organized as 1,048,576 words of 8 bits from Fujitsu Semiconductor. The MB85AS8MT uses the resistance-variable memory process and silicon-gate CMOS process technologies to form nonvolatile memory cells. This...
ReRAM Click features ReRAM (Resistive Random Access Memory) module which contains the cell array made of 524.288 words x 8 bits, which totals 4 Mbits of data. The used memory module can withstand a large number of write cycles, it has data retention period greater than 10 years and it can read and write to random addresses with no delay. Besides these...
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