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MIKROE is proud to partner with Everspin Technologies, a pioneering force in magnetoresistive random-access memory (MRAM). By integrating Everspin’s MRAM chips into MIKROE Click boards™, we offer developers high-speed, non-volatile memory modules that enhance reliability and resilience in embedded and IoT applications.
MIKROE Click Boards™ Featuring Everspin Technology
Our Everspin-enabled Click boards™ focus on one primary application - Storage. Designed to plug directly into the mikroBUS™ interface and fully supported by NECTO Studio, mikroSDK, and example libraries, these boards provide seamless integration and quick prototyping.
Click Board Category:
Everspin MRAM stands out for its ability to maintain SRAM-like speed while being non-volatile, making it perfect for applications requiring durable, high-speed data storage without power dependency.
Why Choose MIKROE + Everspin Technologies?
Explore all MIKROE Click boards™ featuring Everspin MRAM, and advance your embedded system design with fast, resilient, and maintenance-free storage.
MRAM 2 Click is a compact add-on board for applications that must store and retrieve data and programs quickly using a small number of pins. This board features the MR10Q010, 1Mb Quad Output High-Speed Serial SPI MRAM memory solution from Everspin Technologies. It operates in both standard, single SPI and High-speed QUAD SPI mode with a clock rate up to...
MRAM 4 Click is a compact add-on board representing a magneto-resistive random-access memory solution. This board features the EM064LXQADG13IS1R, an industrial STT-MRAM persistent memory from Everspin Technologies. It is a 64Mb MRAM IC RAM and can achieve up to 200MHz as a single and double data rate (STR/DTR). The MRAM technology is analog to Flash...
MRAM click features MRAM module which contains 262,144 magnetoresistive memory cells, organized into 32,768 bytes of memory. It means that MRAM click is a memory storage device with 32KB of memory space. The used memory module can withstand an unlimited number of write cycles, it has data retention period greater than 20 years and it can read and write to...
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